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 CMPT2907AE ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907AE is an Enhanced version of the CMPT2907A PNP Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C2FE FEATURED ENHANCED SPECIFICATIONS:
SOT-23 CASE
BVCBO from 60V min to 90V min. (115V TYP) VCE(SAT) from 1.6V max to 0.7V max. (0.280V TYP) hFE from 50 min to 75 min. (110 TYP)
Collector-Base Voltage
MAXIMUM RATINGS: (TA=25C)
Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA
90 60 5.0 600 350 -65 to +150 357
UNITS V V V mA mW C C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=50V ICBO VCB=50V, TA=125C ICEV VCE=30V, VEB=0.5V BVCBO IC=10A 90 115 BVCEO IC=10mA 60 BVEBO IE=10A 5.0 VCE(SAT) IC=150mA, IB=15mA 0.103 VCE(SAT) IC=500mA, IB=50mA 0.280 VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA 100 205 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE VCE=10V, IC=150mA 100 VCE=10V, IC=500mA 75 110 hFE fT VCE=20V, IC=50mA, f=100MHz 200 Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=2.0V, IC=0, f=1.0MHz
Enhanced specification
MAX 10 10 50
0.2 0.7 1.3 2.6
UNITS nA A nA V V V V V V V
300 MHz pF pF
8.0 30
R2 (1-February 2010)
CMPT2907AE ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MAX ton td tr toff ts tf VCC=30V, VBE=0.5V, IC=150mA, VCC=30V, VBE=0.5V, IC=150mA, VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA IB1=15mA IB1=15mA 45 10 40 100 80 30
UNITS ns ns ns ns ns ns
VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C2FE
R2 (1-February 2010)
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